Optical Characterization of Epitaxial Semiconductor Layers

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Results and Discussion

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Optical Characterization of Epitaxial Semiconductor Layers

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Chemical Mechanical Planarization: Advanced Material and Consumable Challenges

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The potential of these techniques are highlighted in two examples: Photomasks with array structures were characterized with Mueller Matrix spectroscopic ellipsometry as a function of the azimuth angle Fig. The intensity changes of the plot could be correlated to analytically determined Rayleigh singularities of different orders in transmission and reflection. The material properties of epitaxially grown GaN are determined by photoluminescence at 15 K.

Highly resolved excitonic emission lines reveal compressive or tensile stress and the impurity in corporation in GaN layers. Contact: Dr.

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  3. Universität-Magdeburg - Publikationen der Abteilung Halbleiterepitaxie.
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  6. Structure and Being: A Theoretical Framework for a Systematic Philosophy.
  7. Andre Wachowiak, Dr. Walter Weber.